Bhubaneswar: RIR Power Electronics is set to establish India’s first silicon carbide (SiC) semiconductor production facility in Odisha.
The company plans to begin the first phase of production by December 2025, focusing on Epitaxy Wafer manufacturing.
Investment and Production Plan
The facility, backed by an investment of Rs 618 crore, aims to manufacture high-power SiC devices, including MOSFETs and diodes ranging from 3.3kV to 20kV. RIR Power Electronics has stated that while the initial phase will focus on wafer production, subsequent phases will involve packaging and full-fledged SiC fabrication.
According to Harshad Mehta, Founder and Promoter of RIR Power Electronics, the company is working closely with the Odisha government to advance semiconductor manufacturing. “With government support, we aim to strengthen India’s semiconductor ecosystem,” he said.
Strategic Importance for India’s Semiconductor Industry
The production of SiC semiconductors is crucial for industries such as electric vehicles, renewable energy, industrial automation, and power electronics. SiC technology is known for its high efficiency and durability, which can improve energy management across multiple sectors.
The initiative aligns with India’s push to develop a domestic semiconductor supply chain, reducing dependence on imports. The government has been encouraging investments in semiconductor manufacturing as part of its broader strategy to enhance self-reliance in critical technologies.
Impact on Employment and Industry
The upcoming facility is expected to generate employment opportunities and support local industry collaborations in Odisha. It will also contribute to regional economic development by positioning India as a player in the global semiconductor market.
About RIR Power Electronics
RIR Power Electronics, formerly known as Ruttonsha International Rectifier Ltd, was established in 1969. The company has experience in manufacturing power semiconductors, with a technological association with International Rectifier, USA, for over 25 years. It produces rectifier diodes, thyristors, power modules, and other high-power electronic components.
